“We wouldn’t have had such a boom of electric vehicles without silicon carbide,�?mentioned STMicroeletronics executive Edoardo Merli. A single of those specific properties is that gate oxides in SiC-based power devices are generally characterised by a relatively large number of interface states, causing the so-known as threshold-voltage hysteresis. Spark gaps https://www.facebook.com/permalink.php?story_fbid=pfbid037ygWqXdnuAU2knGnKdrt92ZWnAPHZRSAgmupiwLCfW1B8btwFnCGspm3F2Pv2FsRl&id=61562415773754&__cft__[0]=AZWoUPws0hIc1ZDTeTRXteSiEfFBOaUWYI91kX8VGC79uFeq10IsV-0KASqOREUKFAQb7wd1PD2XzF0_lC-PUw-yknYcUJ15fIwYjkcdjJL4hiwyW3PqyAST0meCwIVbakD50BRbw3sc4FMaiAIdE5fkqnKuvhFLxfiMtz5z0VmhHPQHzCmwhKDm42JQUdxI2bhFzroHOQkNQ9qKFHrGULqm&__tn__=%2CO%2CP-R